Wang Hua, Yu Jun, Zhou Wenli, Wang Yunbo, Xie Jifan, Zhou Dongxiang, Zhu Lili
The basic structure and storage mechanism of ffet
The storage mechanism of ffet is called polarized storage [10].
mfs-fety.s.wu [3] produced the first mfs fet in 1974,
By adding these transition layers, the storage characteristics of ferroelectric field-effect transistors have been improved to a certain extent,
3 Srbi2ta2o9 Iron Thin Film Srbi2ta2o9 (abbreviated as sbto) is a layered perovskite structure with lattice constants of a=b=0.39nm and c=2.51nm.
